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HiPerFET TM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, Low Q g
Low R g , High dv/dt, Low t rr
Preliminary Data Sheet
IXFH36N55Q2
V DSS = 550 V
I D25 = 36 A
R DS(on) = 0.18 ?
t rr ≤ 250 ns
Symbol
Test Conditions
Maximum Ratings
TO-247 AD (IXFH)
V DSS
V DGR
V GS
V GSM
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M ?
Continuous
Transient
550
550
± 30
± 40
V
V
V
V
(TAB)
I D25
I DM
I AR
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
36
144
36
A
A
A
G = Gate
S = Source
TAB = Drain
E AR
E AS
dv/dt
P D
T J
T JM
T stg
T L
T C = 25 ° C
T C = 25 ° C
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS ,
T J ≤ 150 ° C, R G = 2 ?
T C = 25 ° C
1.6 mm (0.063 in) from case for 10 s
50
2.5
20
560
-55 ... +150
150
-55 ... +150
300
mJ
J
V/ns
W
° C
° C
° C
° C
Features
Double metal process for low gate
resistance
International standard packages
Epoxy meet UL 94 V-0, flammability
classification
Low R DS (on) , low Q g
Avalanche energy and current rated
Fast intrinsic rectifier
Applications
M d
Weight
Mounting torque
1.13/10 Nm/lb.in.
0.9/6 Nm/lb.in.
6 g
DC-DC converters
Switched-mode and resonant-mode
power supplies, >500kHz switching
DC choppers
Pulse generation
Laser drivers
Advantages
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
Easy to mount
Space savings
V DSS
V GS = 0 V, I D = 250 μ A
550
V
High power density
V GS(th)
I GSS
I DSS
V DS = V GS , I D = 4 mA
V GS = ± 30 V DC , V DS = 0
V DS = V DSS
V GS = 0 V
T J = 25 ° C
T J = 125 ° C
2.5
5.0
± 100
25
1
V
nA
μ A
mA
R DS(on)
V GS = 10 V, I D = 0.5 ? I D25
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
0.18
?
? 2004 IXYS All rights reserved
DS99074A(04/04)
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